Power Product of the Year
Product Name: Navitas NV6169
Company: Navitas Semiconductor
On May 10th, 2022, Navitas Semiconductor, the industry-leader in gallium nitride (GaN) power integrated circuits has announced the NV6169, a new high-power 650/800 V-rated GaNFast™ power IC with GaNSense™ technology to address higher-power applications such as 400-1000 W 4K/8K TVs and displays, next-generation gaming systems, 500 W solar microinverters, 1.2 kW data-center SMPS, and up to 4 kW / 5 hp motor drives.
GaN is a next-generation power semiconductor technology running 20x faster than traditional silicon. Compared with traditional silicon chargers, gallium nitride chargers can achieve 3x the power or 3x faster charging with up to 40% energy savings in just half the size and weight of legacy silicon solutions. GaNFast power ICs with GaNSense technology integrates power, drive, control, with additional autonomous-protection and loss-less current-sensing to deliver the simplest, smallest, fastest and now even-higher-power performance.
Mobile – Over 200 mobile chargers are in production using GaNFast devices and 240 in development. Applying GaN to every mobile application would save over 9 billion kWh and over 6 billion kg of CO2 by 2025, equivalent to 1.3 million ICE passenger vehicles or almost 14 billion barrels of oil.
Data centers – Upgrading from legacy silicon to high-efficiency GaN in the data center industry can reduce electricity use by up to 10% – an improvement that if applied across all data centers could reduce energy demand by over 15 TWh, save $1.9B in annual electricity costs and reduce CO2 by 10 Mtons – or the equivalent annual emissions of over 2 million gas-based passenger vehicles.
Solar – GaN power ICs drive down cost-per-watt of energy conversion and storage to support cost reductions of up to 25% – reducing payback periods and accelerating adoption of solar energy.
EV – A transition from silicon to GaN power ICs could accelerate world-wide adoption of EVs by three years and reduce road-sector emissions by 20%/year by 2050.
A record-breaking 50,000,000 GaN power chips have been shipped to customers including Samsung, Dell, Lenovo and Xiaomi with zero reported GaN-related field failures, and GaNSense technology enables real-time, accurate sensing of voltage, current and temperature to further improve total system performance and robustness.
Navitas’ NEW 45 mOhms NV6169 features a 36% reduction in on-resistance (RDS(ON)), delivering 50% more power than prior designs, in an industry-standard, low-profile, low-inductance, 8 x 8 mm PQFN package for high-efficiency, high-density power systems.
The NV6169 is the highest-power-rated IC from the most-advanced, third-generation integrated GaN platform. GaNFast power ICs with GaNSense technology feature GaN-industry-first features such as loss-less current sensing and the world’s fastest short-circuit protection, with a ‘detect-to-protect’ speed of only 30 ns, 6x faster than discrete solutions. In motor-drive applications, GaN ICs deliver up to 40% energy savings vs. silicon IGBTs, eliminate 30 external components, and increase system efficiency by 8%.
Unlike competing solutions, the NV6169 is rated at 650V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly-integrated power IC, the GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-discharge (ESD) specification of 2 kV.
Furthermore, unprotected, so-called ‘discrete’ GaN or silicon chips can’t match Navitas’ performance and reliability, and by offering the NV6169, Navitas extend their reach into higher-power applications such as data centers, solar and EV – with an unprecedented 20-year limited warranty to accelerate GaN adoption into these more-demanding systems.
The NV6169 is available immediately to customers under NDA. Mass production lead times are currently 6 to 16 weeks. Simulation models (PSPICE/LTSPICE/SiMetrix), 3D package model (STP) and application note (AN-0016) are available to designers to optimize next generation systems.
Navitas Semiconductor (Nasdaq: NVTS) is the industry leader in GaN power ICs, founded in 2014. GaN power ICs integrate GaN power with drive, control, protection and sensing to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new-energy markets. Over 145 Navitas patents are issued or pending, and over 50 million units have been shipped with zero reported GaN field failures. Sustainability is a core focus, as every GaNFast power IC shipped saves 4 kg of CO2 emissions. Navitas is the first semiconductor company to achieve CarbonNeutral™ certification and leads the mission to “Electrify Our World™”. Navitas rang the Nasdaq opening bell and started trading on Nasdaq on October 20th, 2021.
1. NV6169 App Note
2. Sustainability Report https://navitassemi.com/wp-content/uploads/2022/03/Sustainability-Report-Brochure-v11.pdf
3. 20-yr-warranty whitepaper https://navitassemi.com/wp-content/uploads/2022/04/A150_Navitas_20W_PDF_v2.pdf
4. Beyond performance and reliability whitepaper https://navitassemi.com/wp-content/uploads/2022/05/GaN-Reliability-Beyond-Performance-and-Efficiency.pdf
5. Unlocking GaN’s full potential whitepaper https://navitassemi.com/wp-content/uploads/2022/06/Unlocking-GaNs-Full-Potential.pdf
6. Motor Drive whitepaper https://navitassemi.com/wp-content/uploads/2022/05/Autonomous-GaN-Power-ICs-Deliver-High-Performance-Reliable-Motor-Drives.pdf